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发明授权
CN100587130C 钨酸铅晶体的制备方法 失效 - 权利终止 转让 许可

钨酸铅晶体的制备方法
摘要：
本发明公开了一种钨酸铅晶体的制备方法，它包括如下步骤：原料预处理；将预处理后的原料即PbWO4注入置有籽晶的生长坩埚，顶部预留0.1-0.6倍于晶体长度的空间，然后包装好；对坩埚内预留空间部分进行抽真空，然后再注入1个大气压的氧气，密封坩埚；将坩埚置于下降炉内接种、生长，炉温控制在1200-1250℃，坩埚下降速率1mm/h；晶体生长结束后按30℃/h速度降温至950℃退火5小时；将生成的钨酸铅晶体在退火炉中按照30℃/h升温至1000℃，恒温5小时使之退火，然后再按照30℃/h降温至室温；将得到的钨酸铅晶体按照既定规格切割、抛光即可得到成品。
摘要（英）：

The invention discloses a method for preparing lead tungstate crystal, and contains the following steps: pre-treating the raw material PbWO3, pouring into the growing crucible containing crystallon with a space of 0.1-0.6 time of the crystal length at the top, packaging, sealing, vacuumizing, reinjecting oxygen of one atmospheric pressure, placing in a descent furnace for inoculating and growing,keeping the furnace temperature at 1200-1250DEG C, descending at a speed of 1mm/h, cooling to 950DEG C at a speed of 30DEG C/h, annealing for 5h, heating the lead tungstate crystal in an annealing furnace to 1000DEG C at a speed of 30DEG C/h, keeping the temperature for 5h for annealing, cooling to room temperature at a speed of 30DEG C/h, cutting according to the settled specification, and polishing to obtain the final product.

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