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发明授权
CN101114525B 移位寄存器阵列 有权

移位寄存器阵列
摘要：
本发明公开一种移位寄存器阵列，具有多个串接级的移位寄存器。移位寄存器包括：第一晶体管，具有第一栅极、第一端以及第二端，第一栅极以及第一端耦接至第一输入端，而第二端耦接至第一节点；第二晶体管，具有第二栅极、第三端以及第四端，第三端耦接至频率输入端，第二栅极耦接至第一节点，而第四端耦接至输出端；以及上拉单元。上拉单元包括：第三晶体管，耦接于第一节点以及接地端之间，具有第三栅极耦接至第二节点；第一电容，耦接于频率输入端以及第二节点之间；以及第四晶体管，耦接于第二节点以及接地端之间，具有第四栅极耦接至第一节点。
摘要（英）：

The invention discloses a shift register sequence which is provided with a plurality of shift registers of a concatenation grade. The shift register includes: a first transistor which is provided with a first grid, a first end and a second end, the first grid and the first end are coupled to the input end of the first end while the second end is coupled to a first node; a second transistor which is provided with a second grid, a third end and a fourth end. The third end is coupled to the frequency input end, the second grid is coupled to the first node while the fourth end is coupled to the output end; and an upper connecting unit which includes: a third transistor which is coupled between the first node and a ground end and is provided with the third grid which is coupled to the second node; the first capacitance which is coupled to a frequency input end and the second node; and a fourth transistor which is coupled between the second node and the ground end, which is provided with the fourth grid which is coupled to the first node.

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