The invention discloses a semiconductor probe and a manufacturing method thereof. The semiconductor probe comprises a cantilever doped by a first impurity, a resistor tip protruding from one end of the cantilever and doped by a second impurity; a doping control layer formed on both sides of the protrusion portion of the resistor tip; and a first electrode and a second electrode heavily-doped by the second impurity under the control of the doping control layer.