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发明授权
CN101203634B 单晶硅的生长方法 有权

单晶硅的生长方法
摘要：
本发明涉及单晶硅的生长方法。在生长中的单晶硅侧面部负荷有热应力的条件下通过卓克拉尔斯基法生长单晶硅。使生长单晶的气氛气体为惰性气体和含氢原子物质气体的混合气体。
摘要（英）：

A method of growing a silicon single crystal. The method comprises growing a silicon single crystal by the Czochralski method under such conditions that a thermal stress is imposed on a side part of the silicon single crystal being grown. The atmospheric gas in which the single crystal is grown is a mixed gas comprising an inert gas and the gas of a hydrogen-atom-containing substance.

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