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CN101209901A 稀土掺杂的含半导体量子点透明玻璃陶瓷发光材料及其制备方法 无效 - 撤回

稀土掺杂的含半导体量子点透明玻璃陶瓷发光材料及其制备方法
摘要：
稀土掺杂的含半导体量子点透明玻璃陶瓷发光材料及其制备方法，涉及发光材料领域。该玻璃陶瓷组分为(摩尔比)：57.0SiO2－xB2O3－2.0Al2O3－5.0ZnO－12.0Na2O－12.0K2O－5.5CaO－yMN－zRe2O3，y＝1.0－2.0，z＝0－2.0，x＝(6.5－y－z)，其中M为Cd2+、Zn2+或它们的组合，N为S2－、Se2－或它们的组合，Re为Er3+、Eu3+、Sm3+、Tm3+、Ho3+、Tb3+等三价镧系稀土离子。采用熔体急冷法制备。该玻璃陶瓷通过在非晶氧化物基体中析出均匀分布的半导体量子点，在能量高于半导体量子点带隙的入射光激发下，实现稀土离子的发光。
摘要（英）：

The invention relates to a rare earth doping transparent glass ceramic luminescent material containing semiconductor quantum dots and the preparation method thereof, which relates to the field of luminescent material. The components of glass ceramic are (mole ratio): 57.0SiO2-xB2O3-2.0Al2O3-5.0ZnO-12.0Na2O-12.0K2O-5.5CaO-yMN-zRe2O3, y=1.0-2.0, z=0-2.0, x= (6.5-y-z), wherein, M is Cd<2+> and Zn<2+> or the compound thereof, N is S<2->, and Se<2-> or the compound thereof, Re is trivalent lanthanide rare-earth ions, such as Er<3+>, Eu<3+>, Sm<3+>, Tm<3+>, Ho<3+>, Tb<3+>, etc. The invention is prepared by melt-spinning technique. By the means that semiconductor quantum dots of uniform distribution is precipitated in amorphous oxide matrix, the glass ceramic realizes rare-earth ion luminescence with the excitation of band-gap incident light, while the energy of the incident light is higher than that of semiconductor quantum dots.

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