The present invention relates to a semiconductor structure, which includes semi-conductor substrate; first conductivity type first metal oxide semiconductor device includes first grid dielectric layer forming on semi-conductor substrate; first grid electrode layer with metal forming on first grid dielectric layer; silicate layer forming on first grid electrode layer with metal; and second conductivity type second metal oxide semiconductor device whose conductivity type is opposite with first conductive type, includes: second grid dielectric layer forming on semi-conductor substrate; second grid electrode layer with metal forming on second grid dielectric layer; and contact etch stop layer has part of second grid electrode layer with metal, and region between the above part contacting etchstop layer and second grid electrode layer with metal has no silicon substantively. The present invention is used with the advantage of work-function of band edge, at the same time overcomes defect of deplete effect etc.