The present invention provides a method for monitoring the state of the probe card. The method comprises the following procedures: (1) firstly, arranging resistor arrays with same resistance between each metal pads of the test key, wherein the leftmost metal pad and the rightmost resistor are connected through two metal wires surrounding the test key; (2) measuring the resistance between the metal pad I and the metal pad II; (3) determining whether the measured resistance is a normal value, continuing to measure the resistance between the metal pad II and the metal pad III if the resistance is a normal value; and alarming if the resistance is not a normal value, the generation of additional resistor is monitored or the resistance is zero, the using of the probe card can be stopped immediately, the proper test is executed for ensuring the accurate and reliable operation of the subsequent semiconductor test; (4) repeating the above procedures until when all the resistance measured between adjacent metal pads are normal values to indicate that the probe card is all right; and (5) executing normal semiconductor electric property measurement. The invention adopts a novel test key pattern. Through the real-time probe measuring to the probe card, the quick monitoring to the state of the probe card is realized thereby securing that the electric property monitoring is accurate and reliable.