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发明授权
CN1012776B 带有埋置绝缘氧化物区的金属氧化物半导体晶体管制作方法 失效 - 权利终止

带有埋置绝缘氧化物区的金属氧化物半导体晶体管制作方法
摘要：
制作与埋置氧化物区自对准的场效应器件的MOS工艺。在由掩膜部分确定了栅之后，与掩膜部分相对准而进入氧注入。掩膜部分阻挡了氧注入，因而由此制出的晶体管的沟道区同埋置氧化层中的窗口相自对准。
摘要（英）：

MOS process for forming field-effect devices in self-alignment with a buried oxide region. Oxygen is implanted in alignment with masking members after gates have been defined from the masking members. The masking members block the oxygen implantation and thus the channel regions of subsequently formed transistors are self-aligned with openings in the buried oxide layer.

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