利索-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
CN101320778B 形成发光元件用的电极结构的方法和形成层压结构的方法 失效 - 权利终止

形成发光元件用的电极结构的方法和形成层压结构的方法
Abstract:
本发明披露了一种形成发光元件用的电极结构的方法和形成层压结构的方法。形成发光元件用的电极结构的方法包括以下步骤：形成具有开口的屏蔽材料层；通过减小粒子密度以使用于碰撞的平均自由程长的物理汽相沉积方法，在屏蔽材料层和化合物半导体层中通过开口的底部露出的部分上沉积第一材料层；通过除物理汽相沉积方法之外的汽相沉积方法，在屏蔽材料层上的第一材料层上、在开口的底部沉积的第一材料层上、和在化合物半导体层中通过开口的底部露出的部分上沉积第二材料层；以及去除屏蔽材料层和在屏蔽材料层上沉积的第一和第二材料层。
Abstract(English):

A method for forming an electrode structure in a light emitting device is disclosed. The method includes the steps of: forming a mask material layer having an opening; depositing a first material layer on the mask material layer and on a portion of a compound semiconductor layer exposed through the bottom of the opening by a physical vapor deposition method reducing the particle density so that the mean free path for collision is long; depositing a second material layer on the first material layer on the mask material layer, on the first material layer deposited on the bottom of the opening, and on a portion of the compound semiconductor layer exposed through the bottom of the opening by a vapor deposition method other than the physical vapor deposition method; and removing the mask material layer and the first and second material layers deposited on the mask material layer.

Public/Granted literature
Patent Agency Ranking
0/0