The invention discloses a semiconductor structure, bipolar transistor disposition and a method for making the semiconductor device. The semiconductor structure includes: a first conductive type semi-conductor substrate; a first conductive type epitaxial layer formed on the substrate; a slot formed in the epitaxial layer, the slot including dielectric materials; a second conductive type area adjacent to the lateral surface of the slot; and a second conductive type burial layer, which extends upwards from the substrate to join with the area.