The present invention relates to an integrated-circuit device and to a method for fabricating an integrated-circuit device with an integrated fiuidic-cooling channel. The method comprises forming recesses in a dielectric layer sequence at desired lateral positions of electrical interconnect segments and at desired lateral positions of fiuidic-cooling channel segments. A metal filling is depositedin the recesses of the dielectric layer sequence so as to form the electrical interconnect segments and to form a sacrificial filling in the fiuidic-cooling channel segments. Afterwards, the sacrificial metal filling is selectively removed from the fiuidic- cooling channel segments.