A semiconductor-on-insulator structure includes first and second layers which are attached to one another either directly or through one or more intermediate layers. The first layer includes a substantially single crystal germanium semiconductor material while the second layer comprises a glass or a glass-ceramic material having a linear coefficient thermal of expansion (25-300 DEG C) which is within the range of +/- 20*10<-7>/DEG C of the linear coefficient thermal of expansion of the germanium first layer.