A semiconductor light emitting device (100) includes a multi-layer stack (101) of materials including a layer (105) of p-doped material, a layer (107) of n-doped material, and a light generating region (109) therebetween; a first thermal conduction path between the light generating region (109) and the exterior of the device; and a second thermal conduction path having a higher thermal conductivity than that of the first thermal conduction path. The second thermal conduction path is for providing enhanced thermal dissipation from the light generating region (109) to the exterior.