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发明授权
CN101399186B 氮化硅间隙填充层及其形成方法 有权

氮化硅间隙填充层及其形成方法
摘要：
一种形成氮化硅间隙填充层的方法，此方法是先进行一前多阶段形成工艺，以在一基底上形成一堆叠膜层。然后，再进行一后单阶段沉积工艺，以在堆叠膜层上形成一顶层，其中顶层的厚度占总体氮化硅间隙填充层厚度的10％以上，顶层的厚度大于前多阶段形成工艺所形成的堆叠膜层的各膜层的厚度，从而堆叠膜层构成密集膜而顶层构成疏松膜。
摘要（英）：

The invention relates to a method for forming a packing layer in the clearance of silicon nitride, and the method comprises the following steps: firstly, a former multistage forming process is carriedout to form a stacking film layer on a substrate, thus forming a dense film, and then, a later single stage deposition process is carried out to form a top layer on the stacking film layer, thus forming a loose film, wherein, the thickness of the top layer accounts for more than 10 percent of the total thickness of the packing layer in the clearance of silicon nitride.

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