An electronic device with a CMOS circuit (CC) is provided. The electronic device comprises a first driver circuit (10) having a first and second PMOS transistor (Pl, P2) and a first and second NMOS transistor (Nl, N2). The first driver circuit (10) is coupled between a first voltage (vdde) and ground. The driver circuit is also coupled to the CMOS circuit (CC). The electronic device furthermore comprise a second driver circuit (20) with a third and fourth PMOS transistor (P3, P4) and a third and fourth NMOS transistor (N3, N4). The second driver circuit (20) is coupled between the first voltage (vdde) and ground. The second driver circuit (20) is complementary to the first driver circuit (10) and switches in the opposite direction to the first driver circuit (10). A gate of the second andfourth PMOS transistor (P2, P4) is coupled to a first bias voltage (REPp) and a gate of the second and fourth NMOS transistor (N2, N4) is coupled to a second bias voltage (REFn). A first capacitance (C3) is coupled between the gate and the drain of the fourth PMOS transistor (P4) and a second capacitance (C4) is coupled between the gate and the source of the fourth NMOS transistor (N4).