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发明授权
CN101410991B 半导体器件制造期间的局部退火 失效 - 权利终止

半导体器件制造期间的局部退火
摘要：
一种在衬底上制造半导体器件的工艺，该半导体器件包括至少一个金属层。该工艺包括，移除该衬底并施加一第二衬底；以及通过在该至少一个金属层上应用电磁辐射束来退火该至少一个金属层。
摘要（英）：

A process for the fabrication of semiconductor devices on a substrate, the semiconductor devices including at least one metal layer. The process includes, removing the substrate and applying a second substrate; and annealing the at least one metal layer by application of a beam of electromagnetic radiation on the at least one metal layer.

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