The invention discloses a TFT pixel structure realized by three times of photoetching. The pixel structure is constructed on a transparent substrate, and the structure sequentially comprises a gate metal layer, a gate insulation layer, a semiconductor layer, a doped layer, a metal buffer layer, a pixel electrode layer and a channel passivation layer; the gate metal layer comprises a gate line, a gate electrode and a data line, the gate line and the gate electrode are connected into a whole, and the data line is separated from the gate line and the gate electrode; the pixel electrode layer comprises a source electrode, a drain electrode and a pixel electrode, the drain electrode and the pixel electrode are connected into a whole, and the source electrode is isolated from the drain electrode; and a through hole is arranged on the gate insulation layer and positioned above the data line, and the source electrode is electrically connected with the data line by the through hole. The invention also discloses a manufacturing method of the pixel structure. The method can help simplify the TFT structure, can lower the requirement for the process tolerance, and can bring convenience to TFT LCDs.