The invention discloses a photolithographic method which is capable of forming different pattern densities and is used for an etching macro load effect test. The photolithographic method uses at least two photolithographic masking plates with different pattern densities, wherein at least one photolithographic masking plate is provided with test patterns. The photolithographic masking plates with different pattern densities are used for carrying out the photolithography at the preset positions in different units in array on a silicon slice, thereby making the array form a photolithographic pattern with even images, and finally the integral photolithographic pattern density is obtained. At least two photolithographic masking plates with different pattern densities are used for carrying out the combined photolithography on basic units, thereby forming the integral photolithographic pattern with different pattern densities, effectively reducing the number of the photolithographic masking plates in the process of the study on the etching macro load, and reducing the study cost.