The invention discloses a device capable of inhabiting the exciton state to improve electroluminescent brightness, which structurally comprises Al/SiO2/Au/P-type OEL/ITO, wherein a semi-permeable electron Au electrode (3) is arranged between a SiO2 layer (4) and a P-type OEL layer (2), the SiO2 layer (4) and the P-type OEL layer (2) are respectively excited by two independent direct current sources, then the excitation energy of a hot-electron is led to be large enough to permeate through the Au electrode to impact and excite the P-type OEL, further, the thickness of the SiO2 layer is 500nm, voltage V1 ranges from 50 v to 200 v, the thickness of the P-type OEL layer is 30 nm, voltage V2 ranges from 3 v to 15 v, thereby completely ionizing excitons of the P-type OEL, and realizing lightingof the P-type OEL. Only extended state luminescence is obtained in the invention, which is used to increase electric field inductive organic electroluminescent quantum efficiency and brightness. Whenthe voltage applied to the SiO2 layer, extended state luminescence is raised monotonically.