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发明公开
CN101542701A 基于硅通孔的三维晶圆叠层的键合方法 有权

基于硅通孔的三维晶圆叠层的键合方法
摘要：
本发明描述了一个基于硅通孔的晶圆叠层的混合键合方法。具有图案的粘胶层将叠层内相邻晶圆连接在一起，同时硅通孔之间的焊接键合被用作晶圆叠层间的电信号互连。粘胶层上设计的图案用以排放焊接过程中产生的气体并消除应力。
摘要（英）：

The invention describes a mixed bonding method of three dimensional wafer lamination based on silicon through hole. Adjacent wafers in the lamination are connected by glue layers with patterns, meanwhile, the welding bond between the silicon through holes are taken as the electrical signal connection between the wafer laminations. The patterns designed on the glue layers are used for discharging the gases generated during welding and eliminating the stress.

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