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发明公开
CN101604656A 一种适于电源极性反转的PN结隔离方法 无效 - 撤回

一种适于电源极性反转的PN结隔离方法
摘要：
本发明公开了一种适于电源极性反转的PN结隔离方法。它包括以下步骤：在P型衬底双极工艺中，在P+掩埋层之间开两个N－外延层窗口，在N－外延层上注入N+，从两个注入N+引出两个金属端。本发明采用二极管切换电位的方式为电源极性反转的半导体元件提供了一种低成本的隔离方法，解决了电源极性反转的半导体元件的隔离技术问题。
摘要（英）：

The invention discloses a PN junction isolation method suitable for power supply polarity reversal. The method comprises the following steps: setting two N-epitaxial layer windows between burial layers in a P-type substrate bipolar process; injecting N+ on an N-epitaxial layer; and extracting two metal ends from two injected N+. The invention adopts the way of switching potential through diodes to provide a low-cost isolation method for semiconductor elements of power polarity reversal, and solves the technical problem of isolating the semiconductor elements of power polarity reversal.

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