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发明授权
CN101609832B 显示装置及其制造方法、以及半导体器件及其制造方法 失效 - 权利终止

显示装置及其制造方法、以及半导体器件及其制造方法
摘要：
本发明公开了一种显示装置及其制造方法、以及半导体器件及其制造方法，其中，该显示装置包括基板上的源电极/漏电极、像素电极、绝缘的分隔壁层、沟道区半导体层。源电极/漏电极和像素电极形成在基板上并彼此接触。绝缘的分隔壁层形成在基板上，并设置有延伸至源电极和漏电极之间的第一开口以及形成在像素电极之上并延伸至像素电极的第二开口。沟道区半导体层形成于第一开口的底部上。绝缘膜形成在分隔壁层上以覆盖包括沟道区半导体层的第一开口。定向膜从绝缘膜上方覆盖第一开口并从像素电极上方覆盖第二开口。通过本发明，可以提高具有像素电极的显示装置的图像质量。
摘要（英）：

The invention discloses a display device and a manufacturing method thereof, and a semiconductor device and a manufacturing method thereof. The display device includes source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode. The invention can improve the image quality of the display device with the pixel electrode.

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