The invention relates to a method for manufacturing a semiconductor integrated circuit and a structure obtained by the method. The method comprises a step of providing an upper covering dielectric layer for a semiconductor substrate and forming a polysilicon grid electrode layer covering the dielectric layer and an upper covering layer; a step of patternizing the polysilicon grid electrode layer to form a grid electrode structure and a local interconnection structure, wherein the grid electrode structure and the local interconnection structure comprise a contact region limited between the grid electrode structure and the local interconnection structure, and the grid electrode structure also comprises the upper covering layer; a step of forming side wall separators on the grid electrode structure and the local interconnection structure and removing the side wall separators on e local interconnection structure; a step of forming the contact polysilicon in the contact area and injecting dope additive impurities in the contact polysilicon; a step of diffusing the dope additive impurities from the contact polysilicon to the contact area of the substrate so as to form a diffusion area; a step of selectively removing a covering layer covering the grid electrode structure; and a step of forming silicide layers on the grid electrode structure and the surface of the contact polysilicon. Therefore, the side wall separators can separate the silicide layer on the grid electrode structure from the silicide layer on the contact polysilicon.