The invention provides a high voltage multi-threshold MOSFET device, and belongs to the technical field of metal oxide semiconductor field-effect transistors. The high voltage multi-threshold MOSFET device comprises a gate electrode, a gate dielectric layer, a source electrode, a drain electrode, a deviation region and a semiconductor substrate, the gate electrode is composed on the gate dielectric layer, the area ratio of the gate dielectric layer uncovered by the gate electrode to the gate dielectric layer covered by the gate electrode is modified by composition of the gate electrode so as to change unit-area capacitance Cox, thus adjusting threshold voltage of the high voltage multi-threshold MOSFET. The high voltage multi-threshold MOSFET device is characterized by easily changing thethreshold voltage, and composition difference of the gate electrode of the high voltage multi-threshold MOSFET can be realized on the same mask, and can be completed in the same etching in the composition process of the gate electrode of a plurality of high voltage multi-threshold MOSFETs. The high voltage multi-threshold MOSFET device has the advantages of simple process and low cost.