The invention discloses a manufacture method of a micro-nano gap electrode. The method comprises the following steps: designing electrode patterns and manufacturing the electrode, i.e. firstly, designing the size of each electrode gap to be 1.2-2.8 microns, wherein electrode patterns comprise an interdigital type, a zigzag type, a square-to-tip type a square-to-square type and a square-to-flat type, the area of each unit is 5800 microns*5800 microns, a ceramic groove has a width of 100 microns, a metal layer is made into small squares on all edges of the unit as an electrode-extracting pattern, and a 4-inch silicon chip is provided with 184 identical units; then, adopting an electron beam to make a plate; using a standard process method for the cleaning and the photoetching of a P-type 100silicon; adopting negative-cutting positive photoresist for plasma etching; and oxidizing so that the growth thickness of silicon dioxide is 1.1 microns; and the electrode gap is at a nano stage or adeep submicron stage. The prepared electrode sensitive material has a sequential distribution rule and a very uniform distribution area and is suitable for sensor probes needing electrode gaps in nanometer structure.