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CN101702418B 降低位错缺陷的GaN基LED芯片外延生长方法 失效 - 权利终止

降低位错缺陷的GaN基LED芯片外延生长方法
摘要：
本发明提供了一种降低位错缺陷的GaN基LED芯片外延生长方法。包括以下步骤：(1)首先在衬底上生长低温GaN缓冲层或AlxGal-xN缓冲层，再在缓冲层上生长高温非掺杂GaN层；(2)把反应室内的生长温度调到600℃-1100℃，然后在反应室内单独通入CP2Mg和NH3，CP2Mg和NH3发生反应，在步骤(1)制作的高温非掺杂GaN层上形成MgN，通过通入CP2Mg的时间控制这些孔洞的大小和密度；(3)然后按常规方法继续生长GaN基LED芯片的其它外延材料。本发明采用MgN原位制作纳米掩模图形，降低了GaN基材料中的位错缺陷，与SiN掩模相比，制作MgN掩模时对GaN材料没有腐蚀作用，这样在没有掩模处的GaN不会引入更多的缺陷，能获得更高质量的GaN材料。
摘要（英）：

The invention provides a GaN-based LED chip extending and growing method for reducing dislocation defects, comprising the following steps of: (1) firstly, growing a low-temperature GaN buffer layer or AlxGal-xN buffer layer on a substrate, and then growing a high-temperature undoped GaN layer on the buffer layer; (2) regulating the growing temperature in a reaction chamber to 600DEG C to 1100 DEGC ,and then independently introducing CP2Mg and NH3 into the reaction chamber, reacting the CP2Mg with the NH3 to form MgN on the high-temperature undoped GaN layer made in step (1), wherein the sizes and density of the holes are controlled through the time for introducing the CP2Mg; (3) continuously growing other extending materials of a GaN-based LED chip according to the normal method. The invention adopts the MgN to make a nano masking figure in situ to reduce the dislocation defects in a GaN-based material. Compared with SiN masking, the invention has no corrosion on the GaN material when making the MgN masking, and therefore, the GaN having no a masking position can not introduce more defects, and the GaN material with higher quality can be acquired.

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