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发明授权
CN101706634B 具有高开口率的画素设计的布局结构 有权

具有高开口率的画素设计的布局结构
摘要：
本发明提供一种具有高开口率的画素设计的布局结构，包括一基板，第一金属层于基板上形成第一扫描线、第一晶体管的闸极及遮光面，且第一扫描线与第一晶体管的闸极连接。于第一金属层上形成第一绝缘层，非晶硅层于第一绝缘层上形成该第一晶体管的通道及第二晶体管的通道。第二金属层于非晶硅层上形成一数据线、第一晶体管的源极与汲极及第二晶体管的源极与汲极，第二绝缘层则位于第二金属层上方。导电薄膜位于第二绝缘层上以形成第一晶体管与第二晶体管画素电极。同时导电薄膜会形成于第二晶体管的源极与汲极的上方，并作为第二晶体管的闸极及第二扫描线。第二扫描线会与第一扫描在线下重叠。本发明利用上闸极结构(Top-gate)与下闸极结构(bottom-gate)两种不同的组件结构，来设计Double gate，达到维持开口率的目的。
摘要（英）：

The invention provides a pixel design layout structure with high aperture. The layout structure comprises a substrate, wherein a first scanning line, and the gate and shading surface of a first transistor are formed on a first metal layer on the substrate, the first scanning line is connected with the gate of the first transistor; a first insulating layer is formed on the first metal layer, the channels of the first transistor and a second transistor are formed on an amorphous silicon layer which is arranged on the first insulating layer; a data line, the source and drain of the first transistor and the source and drain of the second transistor are formed on a second metal layer which is arranged on the amorphous silicon layer, an second insulating layer is arranged above the second metallayer; a conductive film is arranged on the second insulating layer and pixel electrodes of the first transistor and the second transistor are formed on the conductive film; the conductive film can be formed above the source and drain of the second transistor and can also be used as the gate of the second transistor and a second scanning line; and the second scanning line can overlap with the first scanning line off-line. The pixel design layout structure with high aperture of the invention utilizes two different component structures, namely a Top-gate and a bottom-gate to design the Double gate so as to reach the aim of maintaining the aperture opening ratio.

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