The invention provides a modeling method of mismatch targeting metal-oxide-semiconductor field effect transistors in the field of semiconductor design simulation. The modeling method comprises the following steps of: testing the characteristics of a simulated device and establishing a standard model of the simulated device; testing the mismatch characteristics of the simulated device; adding corresponding formulas on the basis of the standard model and establishing another model containing the mismatch information of the simulated device; and judging whether a deference value of the mismatch model and the standard model is identical with a measured value or not. The invention provides the modeling method of the mismatch of devices in the field of semiconductor design simulation; and in circuit simulation, a model obtained by the method can precisely judge whether the mismatched tolerance of a circuit is in a required range or not and can achieve shorter time consumption and higher efficiency in comparison with the process of a Monte Carlo simulation method.