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发明授权
CN101707202B 半导体感光器件及其制造方法和应用 有权

半导体感光器件及其制造方法和应用
摘要：
本发明公开了一种半导体感光器件，它包括一个源极、一个漏极、一个控制栅极、一个浮栅区、一个衬底以及一个用于连接浮栅区和漏极的p-n结二极管，所述半导体器件的浮栅区用于存储电荷。所述半导体器件的浮栅电势与光照射强度和时间有关，因此可以作为半导体感光器件。本发明还公开了一种上述半导体感光器件和图像传感器的制造方法。本发明还公开了一种由所述半导体感光器件组成的阵列从而形成的图像传感器。本发明公开的半导体感光器件可以简化传统图像传感器中单个像素单元的设计，减小单个像素单元所占用的面积，从而提高图像传感芯片的像素密度，增加图像传感芯片的分辨率并降低制造成本。
摘要（英）：

The invention discloses a semiconductor photosensitization device which comprises a source electrode, a drain electrode, a control grid, a floating grate region, a substrate, and a p-n node diode for connecting a floating gate region and a drain electrode. The floating grate region of the semiconductor photosensitization device is used for storing charges, and the floating grate potential of the semiconductor photosensitization device is related to light exposure intensity and time, thus, the invention can be used as a semiconductor photosensitization device. The invention also discloses production methods of the semiconductor photosensitization device and an image sensor, as well as an image sensor formed by arrays formed by the semiconductor photosensitization device. The semiconductor photosensitization device can simplify the design of a single pixel unit in a traditional image sensor and reduce the area occupied by the single pixel unit, thereby improving the pixel density of theimage sensor, increasing the resolution of the image sensor and reducing the production cost of the image sensor.

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