The invention provides a wafer reduction type powerless chemical gilding method. The method includes the following steps: a wafer is immersed into an organic solvent trough to dissolve organisms and is then immersed into a water washing trough for cleaning; plasma surface treatment is carried out on the wafer after water is removed so as to remove the residual organic substances; the wafer is immersed into a pre-immersion wetting trough to increase the surface wetting degree and is then immersed into a chemical gilding trough for reduction reaction; gold is deposited on the surface of the wafer to form a metal layer; finally, the wafer is immersed into the water washing trough for cleaning and the water is removed again, so as to form the metal layer which is uniformly distributed and hascertain thickness as well as high roughness, thereby ensuring the quality and excellent rate of the metal layer. Moreover, the adhesive force when in routing, welding or wafer coating encapsulation can be effectively enhanced, and the metal layer or an electrode junction point with specified part, zone range and shape can be manufactured; what is more, materials can be saved and the manufacturingcost can be reduced as well.