The invention discloses a method for inactivating tellurium-zinc-cadmium pixel detector electrodes, which is used for inactivating the tellurium-zinc-cadmium pixel detector electrodes to reduce current leakage. The method comprises the following steps of: firstly carrying out linear cutting, grinding, mechanical polishing and cleaning on cadmium-zinc-tellurium (CdZnTe) crystals, then chemically polishing in 2% of Br-MeOH to obtain standby CdZnTe chips; carrying out the processes of cleaning, gluing, drying, exposure, development, vacuum electrode evaporation, peeling and the like on the mechanically and chemically polished CdZnTe chips to prepare pixel detector electrodes; then putting the pixel detector electrodes in a RIE-3 reactive ion etcher for evacuation, wherein the vacuum degree is 0.3333-0.3999 Pa, the oxygen flow is regulated to 70-80 cm<3>/min, the working air pressure is regulated to 0.5-1.0 Pa, the radio-frequency power is regulated to 8-12 W, and the etching time is 35-50 min. The CdZnTe surfaces between the CdZnTe pixel detector electrodes prepared through the steps generate compact oxide films, the current leakage is reduced by one order of magnitude, and therefore, the invention achieves the purpose of inactivation.