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发明公开
CN101796214A ZrO2-In2O3系光记录介质保护膜形成用溅射靶 有权

ZrO2-In2O3系光记录介质保护膜形成用溅射靶
摘要：
该ZrO2-In2O3系光记录介质保护膜形成用溅射靶，具有当A为Si、Cr、Al、Ce、Ti、Sn中的1种或2种以上时，由ZraInbAcO100-a-b-c(其中，5原子％＜a＜23原子％、12原子％＜b＜35原子％、0＜c＜30原子％)构成的成分组成，所述光记录介质保护膜形成用溅射靶中所含Zr的90％以上成为Zr与In的复合氧化物相，分散在靶基底中。
摘要（英）：

Disclosed is a sputtering target for forming a ZrO2-In2O3 optical recording medium protective film, which has a composition expressed as ZraInbAcO100-a-b-c (wherein 5 atom% < a < 23 atom%, 12 atom% < b < 35 atom%, 0 atom% < c < 30 atom%) with A being one or more elements selected from Si, Cr, Al, Ce, Ti and Sn. Not less than 90% of Zr contained in the sputtering target for forming a ZrO2-In2O3 optical recording medium protective film is dispersed in the target matrix as a Zr-In complex oxide phase.

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