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发明授权
CN101796646B 基于纳米线的光电子器件 有权 转让

基于纳米线的光电子器件
摘要：
本发明公开了包括纳米线层、光电探测器和半导体光放大器的基于纳米线的光电子器件(100，200，300，400，500)。该器件包括生长自单晶和/或非单晶表面的纳米线(114，214，324，434，436，560，562)。半导体光放大器包括充当镇流激光器以放大信号波导所携载信号的纳米线阵列。纳米线激光器和光电探测器的实施例包括能够提供不同偏振的水平和竖直纳米线(434，436，562，560)。
摘要（英）：

Nanowire-based opto-electronic devices (100, 200, 300, 400, 500) including nanowire layers, photodetectors and semiconductor optical amplifiers are disclosed. The devices include nanowires (114, 214, 324, 434, 436, 560, 562) grown from single crystal and/or non-single surfaces. The semiconductor optical amplifiers include nanowire arrays that act as ballast lasers to amplify a signal carried by asignal waveguide. Embodiments of the nanowire lasers and photodetectors include horizontal and vertical nanowires (434, 436, 562, 560) that can provide different ploarizations.

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