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发明公开
CN101796649A 光电转换装置及其制造方法 无效 - 驳回

光电转换装置及其制造方法
摘要：
本发明提供一种光电转换装置及其制造方法，所述光电转换装置使用将电阻率和透射率的关系最优化的透明电极，实现稳定的高光电转换效率。其中，至少一个透明电极(12，16)为不含有Ga的ZnO层，或者为添加有Ga且上述Ga的添加量相对于上述ZnO层中的Zn为5原子％以下的ZnO层，并且上述ZnO层通过使用添加有氧的稀有气体作为溅射气体的溅射法而形成，上述溅射气体中的上述氧的添加量相对于该氧与上述稀有气体的合计体积为0.1体积％以上、5体积％以下。
摘要（英）：

This invention provides a photoelectric conversion apparatus, which can realize a stably high photoelectric conversion efficiency using a transparent electrode having an optimized relationship between electrical resistivity and transmittance, and a method for manufacturing the same. At least one of transparent electrodes (12, 16) is formed of a Ga-free ZnO layer or a Ga-added ZnO layer. The content of Ga in the ZnO layer is not more than 5 atomic% based on Zn in the ZnO layer. The ZnO layer is formed by a sputtering method using an oxygen-containing rare gas as a sputtering gas. The content of oxygen in the sputtering gas is not less than 0.1% by volume and not more than 5% by volume based on the total volume of the oxygen and rare gas.

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