The invention relates to a conductor electric exploding plasma-based low-energy metal ion implantation (PBLEMII) device which belongs to the technical field of material surface engineering. In the device, various externally input metal plasma sources are canceled; and the PBLEMII is realized in such a way that an electric exploding cathode and an electric exploding anode are arranged in a metal vacuum chamber; metal or an alloy conductor wire is transmitted between the two electrodes by a wire feeding mechanism, the conductor wire generates electric explosion by rapid pulse discharge to form a metal plasma in an inner cavity of a metal pipe, metal ions are injected into the inner wall of the metal pipe under the action of direct current pulse negative bias of a low-energy ion implantationpower supply, which is applied to the metal pipe, and the injected metal ions are inwards dispersed by combining the synchronous heating function of an auxiliary heating source. The invention has theadvantages of realizing low-energy metal ion implantation into the inner wall of the metal pipe and increasing the depth of a surface modifying layer by the synchronous dispersion of the injected ions and has compact equipment structure and low manufacturing cost.