The invention relates to a quantum cascade laser with a photonic quasi crystal waveguide array, comprising a substrate, a lower waveguide layer, a quantum cascade active area structure, an upper waveguide layer, an upper cladding, an upper covering layer, a high-doping ohmic contact layer, a photonic quasi crystal structure array, an electric insulation layer, a front electrode and a back electrode, wherein the lower waveguide layer is grown on the substrate, the middle of the lower waveguide layer is provided with a boss, and a ridge-shaped double-groove table-board structure is formed at both sides of the boss; the quantum cascade active area structure is grown on the boss of the lower waveguide layer; the upper waveguide layer is grown on the quantum cascade active area structure; the upper cladding is grown on the upper waveguide layer; the upper covering layer is grown on the upper cladding; the high-doping ohmic contact layer is grown on the upper covering layer; the photonic quasi crystal waveguide array is manufactured at both sides of the upper covering layer and the high-doping ohmic contact layer, the middle width is 2-10 mu m, and the widths of the photonic quasi crystal structure array at both sides are the same and are respectively 5-24 mu m; the electric insulation layer is deposited on the ohmic contact layer and covers the upper surface and the side wall of the whole ridge-shaped table-board, and the central part of the ridge-shaped table-board, covered with the insulation layer, is reserved with an electric injection window; the front electrode is manufactured on the insulation layer; and the back electrode is grown on the back of the substrate.