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发明授权
CN101911251B 用于处理衬底的设备和方法 失效 - 权利终止

用于处理衬底的设备和方法
摘要：
本发明提供一种用于处理衬底的设备和方法。通过使用所述设备和方法，可在单个腔室中在衬底的边缘区和后部区中的每一者上个别执行等离子处理。所述设备包含：腔室，其提供反应空间；平台，其安装在所述腔室中；等离子屏蔽单元，其在所述腔室中是与所述平台相对地安装着；支撑单元，其用于在所述平台与所述等离子屏蔽单元之间支撑衬底；第一供应管，其提供于所述平台处以将反应气体或非反应气体供应到所述衬底的一个表面；以及第二和第三供应管，其提供于所述等离子屏蔽单元处，所述第二供应管将反应气体供应到所述衬底的另一表面，所述第三供应管将非反应气体供应到所述另一表面。
摘要（英）：

There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a supportunit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

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