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CN101931046B 压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备 有权 转让

压电性薄膜元件及压电性薄膜元件的制造方法、压电薄膜设备
Abstract:
本发明提供一种压电性薄膜元件，其提高了压电特性，可实现高性能且高信赖的压电性薄膜设备。本发明的压电性薄膜元件具有基板及在所述基板上以溅射法成膜的、以由(NaxKyLiz)NbO3(0≤x≤1，0≤y≤1，0≤z≤0.2，x+y+z＝1)表示的钙钛矿型氧化物为主相的压电性薄膜，该压电性薄膜的内部应力的绝对值为1.6GPa以下。
Abstract(English):

To provide a piezoelectric thin film element capable of improving piezoelectric characteristics and realize a piezoelectric thin film device with high performance and high reliability, comprising: a substrate; and a piezoelectric thin film formed on the substrate by a sputtering method, with perovskite oxide expressed by (NaxKyLiz)NbO3 (0≦̸x≦̸1, 0≦̸y≦̸1, 0≦̸z≦̸0, 2, x+y+z=1) as a main phase, wherein an absolute value of an internal stress of the piezoelectric thin film is 1.6 GPa or less.

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