Disclosed are a method for cleaning a semiconductor wafer using ozone, which is effective even at a temperature around room temperature and is environmentally friendly, and a device for cleaning semiconductor wafer. The method for cleaning a semiconductor wafer is characterized in that water containing ozone-containing microbubbles is brought into contact with the surface of a semiconductor waferand the ozone-containing microbubbles have been produced in pure water having an electric conductivity of not more than 1 [mu]S/cm or an aqueous solution having a pH value lowered to 1 at the maximumby the addition of an acid to the pure water, have a particle diameter of not more than 50 [mu]m, and have a peak of particle diameters of 10 to 15 [mu]m as measured with a submerged particle counterin a laser beam cutoff system, the number of the ozone-containing microbubbles in the peak region being not less than 1000 particles/mL. The device for cleaning a semiconductor wafer is characterizedby comprising at least means for producing the water containing ozone-containing microbubbles and means for bringing the water containing ozone-containing microbubbles thus produced into contact withthe surface of the semiconductor wafer.