The invention discloses a method of wafer-level airtight package with an inverted Y-shaped through hole, comprising the following steps of: 1, depositing; 2, forming a cavity for sealing and a V-shaped cavity for a scribing groove; 3, electroplating; 4, soldering; 5, forming an insulating layer; 6, removing the insulating layer; 7, forming a conductive metal; and 8, filling. The invention seals acavity by bonding metal between a cap wafer and an MEMS (Micro-Electro-Mechanical System) wafer so as to airtightly packaging an MEMS device; meanwhile, and the inverted Y-shaped through hole with low depth-to-width ratio is convenient to metal deposition so as to guarantee the yield and reduce the floor area of the through hole by being used as a lead wire to guide MEMS signals to a bonding pad at the back of the cap wafer. The the low-depth-to-width-ratio through hole manufacturing technique has the advantages of easily realized process, low device investment and high yield.