Disclosed is a solid-state image sensing device containing an electron multiplication function, which is comprised of an imaging area (VR) composed of a plurality of vertical shift registers; a horizontal shift register (HR) which transfers electrons from the imaging area (VR); a multiplication register (EM) which multiplies electrons transferred from the horizontal shift register (HR); and an electron injecting electrode (11A) provided in an end portion on the side of the starting point in the electron transfer direction of the imaging area (VR). A specific vertical shift register (a channel (CH1)) to which electrons are injected by the electron injecting electrode (11A) is positioned in a thick plate portion of a semiconductor substrate, and is protected from incident light.