The invention provides a light emitting diode and a making method thereof. The making method of the light emitting diode comprises the following steps of: separately providing a semiconductor substrate and a sapphire substrate, wherein a first bonding layer is formed on the semiconductor substrate, and a sacrifice layer, a light emitting diode core and a second bonding layer are formed on the sapphire substrate in sequence; bonding the first bonding layer and the second bonding layer; removing the sacrifice layer and stripping the sapphire substrate. The invention increases the effective light emitting area of the light emitting diode, improves the heat radiating and enhances the light emitting efficiency.