The invention discloses a static random access memory (SRAM). An AA pattern on a mask panel is reproduced when the SRAM is produced, so that a turning area close to a grid area of a field effect transistor PG_1 is a non-right angle in the AA pattern of the mask panel, and a turning area close to a grid area of a field effect transistor PG_r is a non-right angle, wherein the non-right angle turning areas can be curved surface or stair shape. Therefore, the finally-formed SRAM performance mismatch can be prevented.