The invention relates to a method for depositing polysilicon by using a surface microstructure silicon chip, which comprises the following steps: depositing silicon-containing gases and hydrogen on the surface microstructure silicon chip with surface temperature of 1000-1150 DEG C, and preparing the polysilicon. Compared with the existing preparing method using a silicon chip with the diameter of8mm, the method for depositing polysilicon by using the surface microstructure silicon chip has the advantages of large initial deposition surface area, fast initial deposition rate, reduction of restoring current drain and the like; in addition, in the method for depositing polysilicon by using the surface microstructure silicon chip, the surface microstructure silicon chip can directly react inan existing reactor without reforming equipment, thus saving a plenty of equipment reconstruction expenses.