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发明授权
CN102037548B 具有集成场效应整流器的MOSFET 失效 - 权利终止

具有集成场效应整流器的MOSFET
摘要：
一种修改的MOSFET结构，包括集成的场效应整流器，连接在MOSFET的源极与漏极之间，用于在MOSFET的切换期间分流电流。集成的FER提供MOSFET的更快切换，因为在切换期间没有注入的载流子，而同时还相对于分立的解决方案降低了EMI的程度。MOSFET和FER的集成结构可以使用N-外延、多层外延和超沟槽技术包括0.25μm技术来制造。可以使用自对准工艺。
摘要（英）：

A modified MOSFET structure comprises an integrated field effect rectifier connected between the source and drain of the MOSFET to shunt current during switching of the MOSFET. The integrated FER provides faster switching of the MOSFET due to the absence of injected carriers during switching while also decreasing the level of EMI relative to discrete solutions. The integrated structure of the MOSFET and FER can be fabricated using N-, multi-epitaxial and supertrench technologies, including 0.25µm technology. Self-aligned processing can be used.

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