The invention relates to a manufacture procedure of a selective emitter solar battery, comprising the following steps: forming a thin silicon nitride layer by a substrate formed by nitriding crystal silicon by ammonia plasma; then patterning the thin silicon nitride layer into a blocking image; then doping a doping element into the substrate through the blocking image, thus forming a lightly doped diffusion region which is corresponding to the blocking image region and electrically opposite to the substrate, and forming a heavily doped diffusion region which is corresponding to the region uncovered by the blocking image and electrically opposite to the substrate, thereby forming an electrical junction structure capable of generating photoelectric current by irradiation; then, after removing the blocking image, forming a leading electrode which is electrically connected with the substrate on the heavily doped diffusion region; and forming a back electrode which is electrically connected with the substrate on the bottom surface of the substrate to finish manufacturing the selective emitter solar battery.