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发明授权
CN102067243B 具有FTO/ITO层叠体的透明导电膜 失效 - 权利终止

具有FTO/ITO层叠体的透明导电膜
摘要：
本发明提供一种透明导电膜，其特征在于，是用于在基材上层叠的包含ITO膜和FTO膜的透明导电膜，FTO膜的表面的晶体结构的一部分或全部为斜方晶；还提供一种透明导电膜，其特征在于，是用于在基材上层叠的包含ITO膜和FTO膜的透明导电膜，FTO膜的膜厚度为5nm～20nm、且FTO膜为连续膜。另外，本发明提供上述透明导电膜的制备方法，其特征是通过高温溶胶法在基材上形成ITO膜后，在ITO膜上连续地形成FTO膜。
摘要（英）：

A transparent conductive film which is to be arranged on a base and composed of an ITO film and an FTO film, said transparent conductive film being characterized in that a part or all of the crystal structure of the FTO film surface is orthorhombic. Another transparent conductive film which is to be arranged on a base and composed of an ITO film and an FTO film, said transparent conductive film being characterized in that the FTO film is a continuous film having a thickness of 5-20 nm. A method for producing the transparent conductive films, said method being characterized in that an ITO film is formed on a base by a pyrosol process and then an FTO film is continuously formed on the ITO film.

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