The invention belongs to the technical field of polysilicon purification with a physical metallurgy technology and particularly relates to a method for coupling and purifying polysilicon and removing phosphorus and metal with electron beams. The method comprises the following steps of: forming a stable melting pool on the top of a low-phosphorous low-metal high-purity silicon ingot with the electron beams; putting silicon powder to be purified into the melting pool and melting to realize the rapid melting of the powder body to remove volatile phosphorous impurity in the silicon powder; simultaneously carrying out directional ingot pulling so that the low-phosphorus polysilicon grows in a directional solidification way; and removing metal impurities in the polysilicon by utilizing a segregation effect. The invention has the remarkable effects that: because ways of melting silicon powder with the electron beams and carrying out directional solidification are simultaneously adopted, the phosphorus impurity is rapidly removed with the electron beams, and the metal impurities with lower segregation coefficient are removed by the directional solidification way, the purity of the polysilicon is effectively improved, and the using requirement of solar grade silicon is achieved. The invention has the advantages of good purification effect, stable technology, simple process, high production efficiency, energy saving, low cost and suitability for batch production.