The invention discloses a method for manufacturing a novel super-junction semiconductor device with an extended groove. By key process steps of multiple-time extending, multiple-time injecting and etching the extended groove, filling and leveling an insulating medium and then forming an active layer and an electrode and the like, the method realizes the process manufacturing of a novel super-junction structure and super-junction semiconductor device. Compared with the prior art, the method has the following advantages that first, a narrow P column area or N column area with high concentrationcan be formed to be beneficial to reducing on-resistance; second, the bottom of a groove gate is flush with the lower interface of a body area or is slightly lower than the lower interface of the body area, therefore the withstand voltage performance of the device is increased, and the gate-source and gate-drain capacitance is reduced; third, complicated masking is not needed, and the influence of a small-angle injection technology to a channel region is avoided; and fourth, the negative influences of the extended groove filling and leveling, groove gate manufacturing and leveling to the formed body area, the body contact area and the active area are avoided.