The invention discloses a resistance conversion memory structure and a manufacturing method thereof. The resistance conversion memory structure comprises multiple gating units and multiple resistance conversion storage units, wherein each gating unit corresponds to two resistance conversion storage units; the resistance conversion storage unit comprises an upper electrode, a lower electrode and a storage material clamped between the upper and lower electrodes; the contact area between the storage material and the upper electrode is different from that between the storage material and the lower electrode; the periphery of the lower electrode is coated by an insulating material and formed in a crack of the insulating material; the projection of the lower electrode in a direction vertical to the surface of the lower electrode is of a bar shape, and the length-width ratio of the bar shape is greater than 3:1; and the storage material is partially or completely embedded in the insulating material. The memory structure disclosed by the invention has relatively high density, relatively low power consumption and relatively simple process, and thus has obvious advantages in device performance and cost.